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| Si1433DH New Product Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 0.260 @ VGS = - 4.5 V - 1.6 rDS(on) (W) 0.150 @ VGS = - 10 V ID (A) - 2.2 D TrenchFETr Power MOSFETS: 1.8-V Rated D Thermally Enhanced SC-70 Package APPLICATIONS D Load Switches - Notebook PCs - Servers SOT-363 SC-70 (6-LEADS) D 1 6 D Marking Code BE XX YY Lot Traceability and Date Code Part # Code Top View Ordering Information: SI1433DH-T1 D 2 5 D G 3 4 S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Diode Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C PD TJ, Tstg TA = 25_C ID TA = 85_C IDM IS - 1.4 1.45 0.75 - 55 to 150 - 1.7 -8 - 0.9 0.95 0.5 W _C - 1.4 A Symbol VDS VGS 5 secs Steady State - 30 "20 Unit V - 2.2 - 1.9 THERMAL RESISTANCE RATINGS Parameter t v 5 sec Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 72323 S-31668--Rev. A, 11-Aug-03 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 65 105 38 Maximum 85 130 48 Unit _C/W C/W 1 Si1433DH Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Drain Source On State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = - 100 mA VDS = 0 V, VGS = "8 V VDS = - 16 V, VGS = 0 V VDS = - 16 V, VGS = 0 V, TJ = 85_C VDS = - 5 V, VGS = - 4.5 V VGS = - 10 V, ID = - 2.2 A VGS = - 4.5 V, ID = - 1.6 A VDS = - 10 V, ID = - 2.2 A IS = - 1.2 A, VGS = 0 V -4 0.120 0.210 4 - 0.85 - 1.2 0.150 0.260 W S V -1 -3 "100 -1 -5 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Qg Qgs Qgd td(on) tr td(off) tf VDD = - 15 V, RL = 15 W ID ^ - 1 A, VGEN = - 10 V, RG = 6 W VDS = - 15 V, VGS = - 4.5 V, ID = - 2.2 A 3.1 1.0 1.6 11 17 18 13 17 26 27 20 ns 5 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 8 7 I D - Drain Current (A) 6 5 4V 4 3 2 1 3V 0 0 1 2 3 4 5 0 0 1 VGS = 10 thru 5 V 8 Transfer Characteristics TC = - 55_C 7 25_C I D - Drain Current (A) 6 5 125_C 4 3 2 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) www.vishay.com 2 Document Number: 72323 S-31668--Rev. A, 11-Aug-03 Si1433DH New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.75 350 Vishay Siliconix Capacitance r DS(on)- On-Resistance ( W ) 0.60 C - Capacitance (pF) 280 Ciss 210 0.45 0.30 VGS = 4.5 V 0.15 VGS = 10 V 140 Coss 70 Crss 0.00 0 1 2 3 4 5 6 7 8 0 0 6 12 18 24 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 VDS = 15 V ID = 2.2 A r DS(on)- On-Resistance ( W ) (Normalized) 8 1.4 1.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 2.2 A V GS - Gate-to-Source Voltage (V) 6 1.2 4 1.0 2 0.8 0 0 1 2 3 4 5 6 Qg - Total Gate Charge (nC) 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 10 0.70 On-Resistance vs. Gate-to-Source Voltage r DS(on)- On-Resistance ( W ) 0.56 I S - Source Current (A) TJ = 150_C 1 0.42 ID = 2.2 A 0.28 TJ = 25_C 0.14 0.1 0.00 0.3 0.6 0.9 1.2 1.5 0.00 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 72323 S-31668--Rev. A, 11-Aug-03 www.vishay.com 3 Si1433DH Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.6 35 Single Pulse Power, Junction-to-Ambient 0.4 V GS(th) Variance (V) 28 0.2 ID = 250 mA 0.0 Power (W) 21 14 - 0.2 7 - 0.4 - 50 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 Time (sec) 1 10 TJ - Temperature (_C) Safe Operating Area 10 Limited by rDS(on) I D - Drain Current (A) 1 1 ms 10 ms 0.1 TC = 25_C Single Pulse 100 ms 1s 10 s dc 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 0.02 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 105_C/W Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 72323 S-31668--Rev. A, 11-Aug-03 Si1433DH New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Vishay Siliconix 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 Document Number: 72323 S-31668--Rev. A, 11-Aug-03 www.vishay.com 5 |
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